Title :
Temperature noise constants extraction of mm-wave FETs from measured S- and noise parameters
Author :
Abdipour, A. ; Pacaud, A.
Author_Institution :
Dept. of Radioelectr. & Electron., Supelec, Gif-Sur-Yvette, France
Abstract :
For the first time, the temperature noise constants of the full semidistributed FET model are extracted by a CAD-oriented method from measured S- and noise parameters, instead of curve fitting or by optimization procedure. Using extracted noise constants and their temperature variations, the temperature dependence of the noise parameters of the mm-wave FETs are here reported.
Keywords :
S-parameters; millimetre wave field effect transistors; semiconductor device models; semiconductor device noise; CAD; MM-wave FET; S-parameters; full semidistributed model; noise constants; parameter extraction; temperature dependence; Active noise reduction; FETs; Fixtures; Frequency; HEMTs; Microwave Theory and Techniques Society; Noise measurement; Predictive models; Temperature dependence;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512274
