Title :
A 1-V, 44.6 ppm/°C bandgap reference with CDS technique
Author :
Chen, Peng-Yu ; Chang, Soon-Jyh ; Huang, Chung-Ming ; Lin, Chin-Fu
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A CMOS bandgap reference generator with switched-capacitor and corresponding double sampling techniques is presented. The proposed circuit uses a low-gain amplifier to generate an accurate reference voltage so that this structure can be implemented in low-voltage environment. With proper design, the circuit can produce any output voltage between supply voltage and ground. The circuit was designed and implemented in 0.18-μm CMOS process. The core circuit occupies about 0.065 mm2 (240 μm × 271 μm). Measurement results show that the temperature coefficient of the output is 47.3 ppm/°C in the temperature range from -40 °C to 100 °C. The average power consumption is about 48.1 μW.
Keywords :
CMOS integrated circuits; amplifiers; reference circuits; switched capacitor networks; CDS technique; CMOS bandgap reference generator; CMOS process; double sampling techniques; low-gain amplifier; low-voltage environment; size 0.18 mum; size 240 mum; size 271 mum; switched-capacitor; temperature -40 degC to 100 degC; voltage 1 V; CMOS integrated circuits; Generators; Photonic band gap; Signal processing; Switches; Temperature dependence; Temperature measurement;
Conference_Titel :
VLSI Design, Automation, and Test (VLSI-DAT), 2012 International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4577-2080-2
DOI :
10.1109/VLSI-DAT.2012.6212660
