DocumentCode
2272811
Title
Large-signal modeling of self-heating and RF-breakdown effects in power HBTs
Author
Wei, C.J. ; Hwang, J.C.M. ; Ho, W.J. ; Higgins, J.A.
Author_Institution
Lehigh Univ., Bethlehem, PA, USA
Volume
3
fYear
1996
fDate
17-21 June 1996
Firstpage
1751
Abstract
A large-signal HBT model including both self-heating and RF-breakdown effects was developed. The model was verified through RF waveform measurements. Using the model, the competing effects of open-base and open-emitter breakdown were analyzed.
Keywords
heterojunction bipolar transistors; power bipolar transistors; semiconductor device models; RF breakdown; large-signal model; open-base breakdown; open-emitter breakdown; power HBT; self-heating; Breakdown voltage; Cutoff frequency; Electric breakdown; Frequency measurement; Heterojunction bipolar transistors; Power transistors; RF signals; Radio frequency; Testing; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location
San Francisco, CA, USA
ISSN
0149-645X
Print_ISBN
0-7803-3246-6
Type
conf
DOI
10.1109/MWSYM.1996.512281
Filename
512281
Link To Document