Title :
Large-signal modeling of self-heating and RF-breakdown effects in power HBTs
Author :
Wei, C.J. ; Hwang, J.C.M. ; Ho, W.J. ; Higgins, J.A.
Author_Institution :
Lehigh Univ., Bethlehem, PA, USA
Abstract :
A large-signal HBT model including both self-heating and RF-breakdown effects was developed. The model was verified through RF waveform measurements. Using the model, the competing effects of open-base and open-emitter breakdown were analyzed.
Keywords :
heterojunction bipolar transistors; power bipolar transistors; semiconductor device models; RF breakdown; large-signal model; open-base breakdown; open-emitter breakdown; power HBT; self-heating; Breakdown voltage; Cutoff frequency; Electric breakdown; Frequency measurement; Heterojunction bipolar transistors; Power transistors; RF signals; Radio frequency; Testing; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512281
