Title :
A large-signal physical HEMT model
Author :
Morton, C.G. ; Atherton, J.S. ; Snowden, C.M. ; Pollard, R.D. ; Howes, M.J.
Author_Institution :
Dept. of Electron. & Electr. Eng., Leeds Univ., UK
Abstract :
This paper reports a new, efficient physical HEMT model capable of accurately predicting DC, small- and large-signal performance. It has been interfaced to an industry standard simulator which allows for accurate, large-signal simulation to be integrated into the design process. Large-signal results demonstrate the model´s suitability for MMIC CAD.
Keywords :
circuit CAD; field effect MMIC; high electron mobility transistors; integrated circuit design; microwave field effect transistors; semiconductor device models; DC performance; HEMT model; MMIC CAD application; large-signal performance; large-signal physical model; small-signal performance; Circuit simulation; Design automation; HEMTs; MMICs; Manufacturing industries; Manufacturing processes; Predictive models; Process design; Scattering parameters; Solid modeling;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512283
