• DocumentCode
    2272884
  • Title

    Relationship between single-event upset immunity and fabrication processes of recent memories

  • Author

    Nemoto, N. ; Shindou, H. ; Kuboyama, S. ; Itoh, H. ; Matsuda, S. ; Okada, S. ; Nashiyama, I.

  • Author_Institution
    Nat. Space Dev. Agency of Japan, Tokyo, Japan
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    193
  • Lastpage
    197
  • Abstract
    Single-Event Upset (SEU) immunity for commercial devices were evaluated by irradiation tests using high-energy heavy ions. We show test results and describe the relationship between observed SEU rate and structures/fabrication processes. In this experiment, single-ion Multiple-Bit Upsets (MBUs) in 4 Mbit SRAM, 16 Mbit DRAM and 64 Mbit DRAM were observed. These MBUs were also discussed
  • Keywords
    DRAM chips; SRAM chips; ion beam effects; 16 Mbit; 4 Mbit; 64 Mbit; DRAM; SRAM; fabrication; heavy ion irradiation; memory device; multiple bit upset; single event upset; Assembly; Costs; Fabrication; Lead; Manufacturing; Plastic packaging; Random access memory; Single event upset; Space vehicles; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
  • Conference_Location
    Fontevraud
  • Print_ISBN
    0-7803-5726-4
  • Type

    conf

  • DOI
    10.1109/RADECS.1999.858579
  • Filename
    858579
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2272884