Title :
Simulation and experimental results of source harmonic tuning on linearity of power GaAs FET under class AB operation
Author :
Watanabe, S. ; Takatuka, S. ; Takagi, K. ; Kuroda, H. ; Oda, Y.
Author_Institution :
Dept. Microwave Solid-State, Toshiba Corp., Kawasaki, Japan
Abstract :
Nonlinearity of GaAs FET amplifiers under class AB operation such as an abrupt increase of the output power against the input power can be effectively reduced by suppressing even-order harmonic distortion in the gate RF voltage. In this paper, we demonstrate the effect of the source harmonic tuning and condition for improving the linearity of power GaAs FETs under class AB operation by the source harmonic tuning technique.
Keywords :
III-V semiconductors; MMIC power amplifiers; circuit tuning; field effect MMIC; gallium arsenide; harmonic distortion; harmonics; microwave power amplifiers; GaAs; GaAs FET amplifiers; amplifier linearity; class AB operation; distortion suppression; even-order harmonic distortion; gate RF voltage; power GaAs FET; source harmonic tuning; FETs; Gallium arsenide; Harmonic distortion; Operational amplifiers; Power amplifiers; Power generation; Power system harmonics; Radio frequency; Radiofrequency amplifiers; Voltage;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512286
