DocumentCode
2272918
Title
Effects of heavy ion impact on power diodes
Author
Busatto, G. ; Iannuzzo, F. ; Wyss, J. ; Pantano, D. ; Bisello, D.
Author_Institution
DAEIMI, Univ. degli Studi di Cassino, Italy
fYear
1999
fDate
1999
Firstpage
205
Lastpage
209
Abstract
An experimental study of the bombardment with high energy 28 Si of power diodes is presented, including charge spectra and current waveforms. It is shown that, for biasing voltages beyond a threshold value, a second conspicuous charge population appears. The corresponding waveforms are classified. The threshold value depends on the ion energy. The peak value of the current depends on the applied voltage and may reach values large enough to trigger instabilities inside the diode
Keywords
ion beam effects; power semiconductor diodes; radiation hardening (electronics); biasing voltages; charge population; charge spectra; current waveforms; heavy ion impact effect; power diodes; Failure analysis; Mesons; Neutrons; Nuclear physics; Protons; Sea level; Semiconductor diodes; Silicon; Telecommunications; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858581
Filename
858581
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