Design study of linearized AlGaAs/GaAs HBTs using Volterra series

Author

Joonwoo Lee ; Woonyun Kim ; Youngsik Kim ; Taemoon Roh ; Bumman Kim

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea

Volume

3

fYear

1996

fDate

17-21 June 1996

Firstpage

1775

Abstract

The intermodulation (IM) mechanism of HBT has been studied theoretically and experimentally. Volterra series analysis with an analytical nonlinear HBT model shows that IP3 can be greatly enhanced by using a punch-through collector structure. It is also found that the high linearity of HBT stems mainly from the almost exact cancellation between base-emitter and base-collector nonlinear current components. The fabricated HBT with a punch through collector has the IP3 of 31 dBm at a DC power consumption of 150 mW, which is 3 dB higher than those of HBTs with normal collector.

Keywords

III-V semiconductors; UHF bipolar transistors; Volterra series; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; intermodulation; semiconductor device models; 150 mW; AlGaAs-GaAs; IM mechanism; IP3; Volterra series; analytical nonlinear HBT model; intermodulation mechanism; linearized HBTs; punch-through collector structure; Application specific integrated circuits; Doping; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Microwave integrated circuits; Photonic integrated circuits; Research and development; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.512287

Filename

512287