Title :
Design study of linearized AlGaAs/GaAs HBTs using Volterra series
Author :
Joonwoo Lee ; Woonyun Kim ; Youngsik Kim ; Taemoon Roh ; Bumman Kim
Author_Institution :
Dept. of Electron. & Electr. Eng., Pohang Inst. of Sci. & Technol., South Korea
Abstract :
The intermodulation (IM) mechanism of HBT has been studied theoretically and experimentally. Volterra series analysis with an analytical nonlinear HBT model shows that IP3 can be greatly enhanced by using a punch-through collector structure. It is also found that the high linearity of HBT stems mainly from the almost exact cancellation between base-emitter and base-collector nonlinear current components. The fabricated HBT with a punch through collector has the IP3 of 31 dBm at a DC power consumption of 150 mW, which is 3 dB higher than those of HBTs with normal collector.
Keywords :
III-V semiconductors; UHF bipolar transistors; Volterra series; aluminium compounds; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; intermodulation; semiconductor device models; 150 mW; AlGaAs-GaAs; IM mechanism; IP3; Volterra series; analytical nonlinear HBT model; intermodulation mechanism; linearized HBTs; punch-through collector structure; Application specific integrated circuits; Doping; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Microwave integrated circuits; Photonic integrated circuits; Research and development; Semiconductor process modeling;
Conference_Titel :
Microwave Symposium Digest, 1996., IEEE MTT-S International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3246-6
DOI :
10.1109/MWSYM.1996.512287
