DocumentCode :
2272937
Title :
Application of WLP with barrier trench structure in precision screen printing technology by glass frit
Author :
Xiao Chen ; Pei-li Yan ; Jia-jie Tang ; Wen-guo Ning ; Gao-wei Xu ; Le Luo
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
fYear :
2010
fDate :
16-19 Aug. 2010
Firstpage :
71
Lastpage :
73
Abstract :
This paper reports on glass frit wafer bonding, which is a universally usable technology for Micro-Electronics Mechanical System (MEMS) wafer level encapsulation and packaging. The package process demonstrated from DEK-APi screen printing of glass frit, firing to wafer bonding by glass frit. However, the dimensions of glass frit after bonding are nonuniform and some frit widens to reach MEMS device, resulting in package failure. A new improved technology (Barrier trench technology, BTT) is developed. And in process of bonding, glass frit expanding in bonding force is resisted by the BTT. The uniformity of bonded glass frit dimension can be achieved. It allows hermetic sealing and a high process yield. And shear test, water test for the gross leak and fine leak test results fulfilled the corresponding MIL-STD.
Keywords :
hermetic seals; micromechanical devices; semiconductor device packaging; semiconductor device testing; wafer bonding; wafer level packaging; DEK-APi screen printing; MEMS device; MEMS packaging; MEMS wafer level encapsulation; barrier trench structure; barrier trench technology; bonding force; fine leak test; glass frit wafer bonding; gross leak test; hermetic sealing; micro-electronics mechanical system; package failure; precision screen printing technology; shear test; water test; Bonding; Cavity resonators; Glass; Micromechanical devices; Packaging; Printing; Wafer bonding; MEMS; WLP; barrier trench; glass frit; hermetic package; screen printing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-8140-8
Type :
conf
DOI :
10.1109/ICEPT.2010.5582363
Filename :
5582363
Link To Document :
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