Performance comparison of MODFET and MESFET using combined electromagnetic and solid-state simulator

Author

Sohel Imtiaz, S.M. ; Alsunaidi, M.A. ; El-Ghazaly, S.M.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

Volume

3

fYear

1996

fDate

17-21 June 1996

Firstpage

1783

Abstract

A Combined Electromagnetic and Solid-State (CESS) simulation model for the analysis of electromagnetic wave effects on the behavior of the submicron semiconductor devices is presented. The CESS simulation model couples a 3D time-domain solution of Maxwell´s equations to the semiconductor model. The performance comparison of two important high frequency devices, MODFET and MESFET, are discussed. The electromagnetic wave effects on the two devices are thoroughly analyzed. The simulation uses the electromagnetic wave concept to emphasize the better performance of MODFET over MESFET. The transfer of energy takes place between the electrons and the electromagnetic wave at high frequencies.

Keywords

Maxwell equations; Schottky gate field effect transistors; electronic engineering computing; high electron mobility transistors; microwave field effect transistors; millimetre wave field effect transistors; semiconductor device models; simulation; time-domain analysis; 3D time-domain solution; CESS simulation model; MESFET; MODFET; Maxwell equations; combined EM/solid-state simulator; electromagnetic simulator; electromagnetic wave effects; high frequency devices; semiconductor model; solid-state simulator; submicron semiconductor devices; Analytical models; Electromagnetic analysis; Electromagnetic devices; Electromagnetic scattering; Frequency; HEMTs; MESFETs; MODFETs; Solid modeling; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1996., IEEE MTT-S International

Conference_Location

San Francisco, CA, USA

ISSN

0149-645X

Print_ISBN

0-7803-3246-6

Type

conf

DOI

10.1109/MWSYM.1996.512289

Filename

512289