Title :
Low-Frequency Noise Characteristics of ZnO Nanorods Schottky Barrier Photodetectors
Author :
Tse-Pu Chen ; Sheng-Joue Young ; Shoou-Jinn Chang ; Chih-Hung Hsiao ; Liang-Wen Ji ; Yu-Jung Hsu ; San-Lein Wu
Author_Institution :
Dept. of Electr. Eng., Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
A Schottky barrier photodetector with ZnO nanorods is fabricated on a glass substrate and the I-V characteristics are investigated. The ZnO nanorods are synthesized by an aqueous method, which allowed the fabricated Schottky barrier photodetector to be more sensitive in the UV region. Under 370-nm illumination, the photocurrent of the ZnO nanorod Schottky barrier photodetector is 6.56 μA and the UV-to-visible ratio is 780.8 at -1V. In addition, the noise equivalent power and normalized detectivity (D*) of the photodetector are 6.74×10-13 W and 3.29 ×1011 cmHz0.5W-1 at -1V, respectively.
Keywords :
II-VI semiconductors; Schottky barriers; nanorods; photodetectors; semiconductor device noise; zinc compounds; Schottky barrier photodetector; ZnO; aqueous method; current 6.56 muA; low frequency noise characteristics; wavelength 370 nm; Films; Noise; Photodetectors; Physics; Schottky barriers; Semiconductor device measurement; Zinc oxide; Low-frequency noise; Schottky barrier; ZnO; nanorod;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2013.2238228
