• DocumentCode
    227311
  • Title

    Preparation and evaluation of Al0.24Ga0.76N photocathode

  • Author

    Guanghui Hao ; Benkang Chang ; Xinlong Chen ; Muchun Jin

  • Author_Institution
    Nanjing Univ. of Sci. & Technol., Nanjing, China
  • fYear
    2014
  • fDate
    June 30 2014-July 4 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Al0.24Ga0.76N photocathode with 150nm emission layer has been activated by Cs/O. The spectral response of the AlGaN photocathode was measured, the result shown that the response cut-off wavelength was 315nm. The peak value of spectral response in reflection-mode and transmission-mode was 33mA/W and 5.8mA/W respectively.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; nanofabrication; nanostructured materials; photocathodes; semiconductor epitaxial layers; semiconductor growth; solid phase epitaxial growth; Al0.24Ga0.76N; Cs-O activation; emission layer; epitaxial layer; photocathode evaluation; photocathode preparation; reflection-mode; response cut-off wavelength; size 150 nm; spectral response; transmission-mode; wavelength 315 nm; Aluminum gallium nitride; Cathodes; Educational institutions; Photoconductivity; Surface cleaning; Surface waves; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    978-1-4799-5770-5
  • Type

    conf

  • DOI
    10.1109/IVESC.2014.6891997
  • Filename
    6891997
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=227311