Title :
Preparation and evaluation of Al0.24Ga0.76N photocathode
Author :
Guanghui Hao ; Benkang Chang ; Xinlong Chen ; Muchun Jin
Author_Institution :
Nanjing Univ. of Sci. & Technol., Nanjing, China
fDate :
June 30 2014-July 4 2014
Abstract :
Al0.24Ga0.76N photocathode with 150nm emission layer has been activated by Cs/O. The spectral response of the AlGaN photocathode was measured, the result shown that the response cut-off wavelength was 315nm. The peak value of spectral response in reflection-mode and transmission-mode was 33mA/W and 5.8mA/W respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; nanofabrication; nanostructured materials; photocathodes; semiconductor epitaxial layers; semiconductor growth; solid phase epitaxial growth; Al0.24Ga0.76N; Cs-O activation; emission layer; epitaxial layer; photocathode evaluation; photocathode preparation; reflection-mode; response cut-off wavelength; size 150 nm; spectral response; transmission-mode; wavelength 315 nm; Aluminum gallium nitride; Cathodes; Educational institutions; Photoconductivity; Surface cleaning; Surface waves; Wavelength measurement;
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-5770-5
DOI :
10.1109/IVESC.2014.6891997
