Title :
Total dose and RT annealing effects on startup current transient in antifuse FPGA
Author :
Wang, J. ; Katz, R. ; Kleyner, I. ; Kleyner, I. ; Sun, J. ; Wong, W. ; McCollum, J. ; Cronquist, B.
Author_Institution :
Actel Corp., Sunnyvale, CA, USA
Abstract :
The startup current in an antifuse field programmable gate array (FPGA) device, A1280A, is investigated in the context of ionizing radiation effects. If properly measured, a radiation induced startup transient (RIST) can be identified after certain amount of irradiation. RIST increases with total dose (TID), and is strongly dependent on the dose rate. Room-temperature biased annealing for few days can reduce RIST to a very low level. A transistor-level mechanism is proposed to elucidate the origin of RIST. The ionization induced leakage in the NMOS diode is believed to be the root cause. The degradation of the ramping speed of the charge pump causes RIST when powering up the device. SPICE simulation was also performed to demonstrate the slow down of the ramping speed by the leakage in the NMOS diode. In typical low-dose-rate space environments, RIST is not the limiting factor for the total dose tolerance
Keywords :
CMOS logic circuits; SPICE; annealing; field programmable gate arrays; radiation effects; transients; NMOS diode; SPICE simulation; antifuse FPGA; biased annealing; field programmable gate array; ionization induced leakage; ionizing radiation; radiation induced startup transient; ramping speed; startup current transient; total dose; Annealing; Coupling circuits; Current measurement; Diodes; Field programmable gate arrays; MOS devices; Power supplies; Power system analysis computing; Power system transients; Space technology;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858594
