DocumentCode
2273192
Title
Effects induced by gamma radiation on the noise in junction field-effect transistors belonging to monolithic processes
Author
Manfredi, P.F. ; Ratti, L. ; Re, V. ; Speziali, V.
Author_Institution
Lawrence Berkeley Lab., CA, USA
fYear
1999
fDate
1999
Firstpage
285
Lastpage
288
Abstract
The effects of γ-rays on the noise characteristics of junction field-effect transistors belonging to three monolithic technologies have been investigated. A substantially different behavior of the radiation-induced noise in N and P-channel JFETs was observed. This results in interesting design considerations for low-noise circuits
Keywords
gamma-ray effects; junction gate field effect transistors; monolithic integrated circuits; semiconductor device noise; JFET; gamma radiation; junction field-effect transistors; low-noise circuits; monolithic processes; noise characteristics; radiation-induced noise; Circuit noise; Degradation; Equations; FETs; Frequency; Gamma rays; JFETs; Laboratories; Low-frequency noise; MOSFET circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858596
Filename
858596
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