Title :
Development of flip-chip interconnections of photodetector readout circuit (ROIC)
Author :
Xu, Gaowei ; Huang, Qiuping ; Yuan, Yuan ; Chen, Xiao ; Luo, Le
Author_Institution :
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
Abstract :
In this paper, the interconnection between 16×16 photodetector ROIC and substrate for the ROIC test was developed. Three kinds of substrate methods, i.e. high-density organic substrate, silicon interposer substrate and through-silicon-via (TSV) technology, were adopted. Three corresponding technical process flows were designed, and corresponding experiments were conducted. Finally, the interconnection between photodetector ROIC and substrates as well as the test of ROIC performance were realized. Above three solutions were compared and evaluated in process realizability, interconnection performance and cost etc. It turns out that TSV method is considered as the advanced and ideal interconnection solution for the test of 16×16, 32×32 and 64×64 photodetector ROIC.
Keywords :
flip-chip devices; integrated circuit interconnections; photodetectors; flip-chip interconnections; high-density organic substrate; photodetector readout circuit; silicon interposer substrate; substrate methods; technical process flows; through-silicon-via technology; Arrays; Indium; Integrated circuit interconnections; Photodetectors; Silicon; Substrates; Through-silicon vias; Flip-chip(FC); Interconnection; Interposer substrate; Re-distribution layer(RDL); Readout circuit(ROIC); Through-silicon via(TSV);
Conference_Titel :
Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-8140-8
DOI :
10.1109/ICEPT.2010.5582375
