DocumentCode
2273205
Title
Development of flip-chip interconnections of photodetector readout circuit (ROIC)
Author
Xu, Gaowei ; Huang, Qiuping ; Yuan, Yuan ; Chen, Xiao ; Luo, Le
Author_Institution
Shanghai Inst. of Microsyst. & Inf. Technol., Chinese Acad. of Sci., Shanghai, China
fYear
2010
fDate
16-19 Aug. 2010
Firstpage
31
Lastpage
33
Abstract
In this paper, the interconnection between 16×16 photodetector ROIC and substrate for the ROIC test was developed. Three kinds of substrate methods, i.e. high-density organic substrate, silicon interposer substrate and through-silicon-via (TSV) technology, were adopted. Three corresponding technical process flows were designed, and corresponding experiments were conducted. Finally, the interconnection between photodetector ROIC and substrates as well as the test of ROIC performance were realized. Above three solutions were compared and evaluated in process realizability, interconnection performance and cost etc. It turns out that TSV method is considered as the advanced and ideal interconnection solution for the test of 16×16, 32×32 and 64×64 photodetector ROIC.
Keywords
flip-chip devices; integrated circuit interconnections; photodetectors; flip-chip interconnections; high-density organic substrate; photodetector readout circuit; silicon interposer substrate; substrate methods; technical process flows; through-silicon-via technology; Arrays; Indium; Integrated circuit interconnections; Photodetectors; Silicon; Substrates; Through-silicon vias; Flip-chip(FC); Interconnection; Interposer substrate; Re-distribution layer(RDL); Readout circuit(ROIC); Through-silicon via(TSV);
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4244-8140-8
Type
conf
DOI
10.1109/ICEPT.2010.5582375
Filename
5582375
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