Title :
Radiation damage in AlGaAs/GaAs pseudomorphic HEMTs
Author :
Ohyama, Hirofumi ; Simoen, E. ; Kuroda, S. ; Claeys, C. ; Takami, Y. ; Hakata, T. ; Hayama, K. ; Tajiri, T. ; Nakabayashi, M. ; Kobayashi, K. ; Yoneoka, M. ; Sunage, H.
Author_Institution :
Kumamoto Nat. Coll. of Technol., Japan
Abstract :
The degradation of AlGaAs/GaAs pseudomorphic HEMTs by 220-MeV carbon, 1-MeV electron and neutron irradiation and their recovery by subsequent isochronal annealing are investigated and compared with results obtained on irradiated InGaP/InGaAs p-HEMTs
Keywords :
III-V semiconductors; aluminium compounds; annealing; electron beam effects; gallium arsenide; high electron mobility transistors; neutron effects; 1 MeV; 220 MeV; AlGaAs-GaAs; electron irradiation; isochronal annealing; neutron irradiation; pseudomorphic HEMTs; radiation damage; Annealing; Degradation; Electrons; Gallium arsenide; HEMTs; Indium gallium arsenide; MODFETs; Neutrons; PHEMTs; Satellite broadcasting;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858598
