Title :
Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)
Author :
Ferlet-Cavrois, V. ; Paillet, P. ; Musseau, O. ; Leray, J.L. ; Faynot, O. ; Raynaud, C. ; Pelloie, J.L.
Author_Institution :
CEA/DRIF, Bruyeres-le-Chatel, France
Abstract :
The DTMOS architecture is particularly suited to very low supply voltage applications (0.6-1V). This paper presents DTMOS devices processed with a partially depleted 0.25 μm SOI technology. It analyses their electrical behavior under total dose irradiation
Keywords :
CMOS integrated circuits; MOSFET; X-ray effects; silicon-on-insulator; 0.6 to 1 V; Si-SiO; X-ray irradiation; dynamic threshold voltage MOS; low supply voltage applications; partially depleted SOI DTMOS; total dose behavior; CMOS technology; Circuits; Dielectric substrates; Isolation technology; Low voltage; MOS devices; MOSFETs; Silicon; Threshold voltage; Transistors;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858600
