Title :
CMOS wafer bonding for back-side illuminated image sensors fabrication
Author :
Dragoi, V. ; Filbert, A. ; Zhu, S. ; Mittendorfer, G.
Author_Institution :
EV Group, St. Florian, Austria
Abstract :
Backside illuminated CMOS image sensors were developed in order to encompass the pixel area limitation due to metal interconnects. In this technology the fully processed CMOS wafer is bonded to a blank carrier wafer and then back-thinned in order to open the photosensitive sensor area. The process flows of the two main competing wafer bonding technologies used for this manufacturing process (adhesive bonding and low temperature plasma activated direct wafer bonding with polymer layers) will be reviewed.
Keywords :
CMOS image sensors; integrated circuit interconnections; wafer bonding; CMOS wafer bonding; backside illuminated CMOS image sensor fabrication; blank carrier wafer; metal interconnect; photosensitive sensor area; Bonding; CMOS integrated circuits; Plasma temperature; Polymers; Surface treatment; Wafer bonding;
Conference_Titel :
Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-8140-8
DOI :
10.1109/ICEPT.2010.5582379
