DocumentCode
2273279
Title
CMOS wafer bonding for back-side illuminated image sensors fabrication
Author
Dragoi, V. ; Filbert, A. ; Zhu, S. ; Mittendorfer, G.
Author_Institution
EV Group, St. Florian, Austria
fYear
2010
fDate
16-19 Aug. 2010
Firstpage
27
Lastpage
30
Abstract
Backside illuminated CMOS image sensors were developed in order to encompass the pixel area limitation due to metal interconnects. In this technology the fully processed CMOS wafer is bonded to a blank carrier wafer and then back-thinned in order to open the photosensitive sensor area. The process flows of the two main competing wafer bonding technologies used for this manufacturing process (adhesive bonding and low temperature plasma activated direct wafer bonding with polymer layers) will be reviewed.
Keywords
CMOS image sensors; integrated circuit interconnections; wafer bonding; CMOS wafer bonding; backside illuminated CMOS image sensor fabrication; blank carrier wafer; metal interconnect; photosensitive sensor area; Bonding; CMOS integrated circuits; Plasma temperature; Polymers; Surface treatment; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology & High Density Packaging (ICEPT-HDP), 2010 11th International Conference on
Conference_Location
Xi´an
Print_ISBN
978-1-4244-8140-8
Type
conf
DOI
10.1109/ICEPT.2010.5582379
Filename
5582379
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