Title :
Response of SIMOX and Unibond buried oxides: trapping and detrapping properties
Author :
Paillet, P. ; Ferlet-Cavrois, V. ; Schwank, J.R. ; Fleetwood, D.M.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Abstract :
X-ray induced charge trapping and detrapping properties are investigated in SIMOX and Unibond(R) buried oxides. A very deep trapping of both holes and electrons is evidenced in these materials. The importance of electron compensation, both during irradiation and anneal, is shown to determine the anneal properties
Keywords :
SIMOX; X-ray effects; annealing; buried layers; charge compensation; electron traps; elemental semiconductors; hole traps; interface states; radiation hardening (electronics); silicon; silicon compounds; SIMOX; Si:O-SiO2; Unibond buried oxides; X-ray induced charge trapping; annealing; deep trapping; detrapping; electron compensation; electrons; holes; irradiation; trapping; Annealing; Charge carrier processes; Electron traps; Geometry; Laboratories; Lead compounds; Modems; Silicon on insulator technology; Threshold voltage; Wafer bonding;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858603
