Title :
BCl3 plasma treatment effect on ohmic contact resistance in GaN-based high electron mobility transistors
Author :
Kobelev, Anton A. ; Smirnov, Alexander S. ; Barsukov, Yuri V. ; Andrianov, Nikolay A.
Author_Institution :
St.-Petersburg State Polytech. Univ., St. Petersburg, Russia
fDate :
June 30 2014-July 4 2014
Abstract :
In present work chemical model describing mechanism of GaN etching and mechanism of Ga-rich layer formation in process of BCl3 plasma treatment of GaN surface is proposed and included to plasma simulation of this process. Numerical results are compared with experimentally measured dependence of ohmic contact resistance on the ICP parameters used in simulation.
Keywords :
III-V semiconductors; boron compounds; contact resistance; gallium compounds; high electron mobility transistors; ohmic contacts; plasma materials processing; sputter etching; wide band gap semiconductors; BCl3; GaN; chemical model; high electron mobility transistors; inductively coupled plasma; ohmic contact resistance; plasma simulation; plasma treatment effect; semiconductor device etching; Etching; Gallium nitride; Iterative closest point algorithm; Ohmic contacts; Plasmas; Resistance;
Conference_Titel :
Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-5770-5
DOI :
10.1109/IVESC.2014.6892008
