• DocumentCode
    227335
  • Title

    BCl3 plasma treatment effect on ohmic contact resistance in GaN-based high electron mobility transistors

  • Author

    Kobelev, Anton A. ; Smirnov, Alexander S. ; Barsukov, Yuri V. ; Andrianov, Nikolay A.

  • Author_Institution
    St.-Petersburg State Polytech. Univ., St. Petersburg, Russia
  • fYear
    2014
  • fDate
    June 30 2014-July 4 2014
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In present work chemical model describing mechanism of GaN etching and mechanism of Ga-rich layer formation in process of BCl3 plasma treatment of GaN surface is proposed and included to plasma simulation of this process. Numerical results are compared with experimentally measured dependence of ohmic contact resistance on the ICP parameters used in simulation.
  • Keywords
    III-V semiconductors; boron compounds; contact resistance; gallium compounds; high electron mobility transistors; ohmic contacts; plasma materials processing; sputter etching; wide band gap semiconductors; BCl3; GaN; chemical model; high electron mobility transistors; inductively coupled plasma; ohmic contact resistance; plasma simulation; plasma treatment effect; semiconductor device etching; Etching; Gallium nitride; Iterative closest point algorithm; Ohmic contacts; Plasmas; Resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electron Sources Conference (IVESC), 2014 Tenth International
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    978-1-4799-5770-5
  • Type

    conf

  • DOI
    10.1109/IVESC.2014.6892008
  • Filename
    6892008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=227335