I-V and Gain Characteristics of Electrowetting-Based Liquid Field Effect Transistor

Author

Kim, Duk Young ; Herman, Stephen ; Steckl, Andrew J.

Author_Institution

Lab. of Nanoelectron., Cincinnati Univ., Cincinnati, OH

fYear

2008

fDate

13-16 July 2008

Firstpage

2

Lastpage

5

Abstract

This work presents an electrowetting-based liquid state field effect transistor (liquiFET) consisting of glass substrate, an Al₂O₃-covered transparent ground electrode (ITO), source and drain metal contacts (ITO), a hydrophobic insulator (amorphous fluoropolymer), a hydrophobic/hydrophilic grid (Kapton/SU-8), two fluids (electrolyte/oil), and top gate electrode (Au wire). The I-V characteristics and transconductance of the liquiFET are measured and the electrostatic field distribution inside the device is simulated.

Keywords

alumina; electrolytes; field effect transistors; gold; indium compounds; liquid films; microfluidics; oils; polymer films; semiconductor device models; wetting; Al₂O₃-ITO-Au; Al₂O₃-covered transparent ground electrode; I-V characteristics; SiO₂; amorphous fluoropolymer; drain metal contact; electrolyte-oil fluid; electrostatic field distribution; electrowetting-based liquid field effect transistor; gain characteristics; glass substrate; gold wire top gate electrode; hydrophobic insulator; hydrophobic-hydrophilic grid; liquiFET; microfluidic device; source metal contact; transconductance; Amorphous materials; Cable insulation; Dielectric liquids; Electrodes; FETs; Glass; Indium tin oxide; Metal-insulator structures; Oil insulation; Petroleum;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Micro/Nano Symposium, 2008. UGIM 2008. 17th Biennial

Conference_Location

Louisville, KY

Print_ISBN

978-1-4244-2484-9

Electronic_ISBN

978-1-4244-2485-6

Type

conf

DOI

10.1109/UGIM.2008.8

Filename

4573186