DocumentCode
2273584
Title
Total dose hardness of a commercial SiGe BiCMOS technology
Author
Van Vonno, N. ; Lucas, Robert ; Thornberry, David
Author_Institution
Intersil Corp., Melbourne, FL, USA
fYear
1999
fDate
1999
Firstpage
414
Lastpage
417
Abstract
Over the past decade SiGe HBT technology has progressed from the laboratory to practical commercial applications. When integrated into a CMOS process, this technology has potential applications in low-cost space systems. In this paper, we report results of total ionizing dose testing of a SiGe/CMOS process accessible through a commercial foundry
Keywords
BiCMOS integrated circuits; Ge-Si alloys; integrated circuit technology; integrated circuit testing; radiation hardening (electronics); semiconductor materials; SiGe; SiGe BiCMOS technology; SiGe HBT/CMOS process; commercial BiCMOS technology; low-cost space systems; total dose hardness; total ionizing dose testing; BiCMOS integrated circuits; CMOS process; CMOS technology; Foundries; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Silicon germanium; Space technology; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858617
Filename
858617
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