DocumentCode :
2273642
Title :
Proton damage in linear and digital optocouplers
Author :
Johnston, A.H. ; Rax, B.G.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fYear :
1999
fDate :
1999
Firstpage :
437
Lastpage :
443
Abstract :
Fundamental differences in design influence the way that linear and digital optocouplers are degraded by radiation. Linear optocouplers are more affected by current drive conditions because the detector operates in a high-injection region when the LED produces normal light output, and do not have the extra operating margin that is inherent in digital optocouplers. Although LED degradation is often the dominant degradation mechanism in space environments, degradation of optocouplers with improved LEDs is limited by photoresponse degradation. Phototransistor gain has a relatively minor effect except at very high radiation levels
Keywords :
light emitting diodes; opto-isolators; proton effects; LED degradation; current drive conditions; digital optocouplers; high-injection region; linear optocouplers; photoresponse degradation; phototransistor gain; proton damage; Degradation; Laboratories; Light emitting diodes; Manufacturing; Phototransistors; Photovoltaic cells; Propulsion; Protons; Radiation hardening; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
Type :
conf
DOI :
10.1109/RADECS.1999.858621
Filename :
858621
Link To Document :
بازگشت