Title :
Physical mechanisms involved during transient irradiation of a 1300 nm laser diode
Author :
Pailharey, E. ; Baggio, J. ; Hose, C. D´ ; Musseau, O.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Abstract :
The behavior of a commercial 1300 nm laser diode under transient irradiations is studied to validate the use of an optical data link in a radiative environment. A Nd:YAG laser is used to simulate the irradiation without any permanent damage. Two specific wavelengths are selected: 1064 nm which allows a selective excitation of the laser cavity simulating transient effects of a single particle and 532 nm which interacts with the whole device. The temporal response of the diode is first observed and its shape is interpreted as a function of the physical structure of the device. Then the variation of the time of return to equilibrium after a perturbation is presented as a function of bias current. The limitations on the optical links for both analogue and digital applications are then discussed
Keywords :
optical links; radiation effects; semiconductor lasers; 1064 nm; 1300 nm; 1300 nm laser diode; 532 nm; Nd:YAG laser; laser cavity simulating transient effects; optical data link; physical mechanisms; radiative environment; temporal response; transient irradiation; Bandwidth; Diode lasers; Extraterrestrial phenomena; Ionization; Large Hadron Collider; Laser theory; Physics; Propagation losses; Semiconductor diodes; Semiconductor materials;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858622
