DocumentCode :
2273727
Title :
Device Fabrication for Data Storage, Semiconductor and MEMS Applications at the University of Alabama Microfabrication Facility
Author :
Gupta, S. ; Highsmith, A. ; Li, Xiao ; Tadisina, Z.R. ; Brown, M.E. ; Guenther, C.L. ; Burkett, S. ; Kotru, S.
Author_Institution :
Dept. of Metall. & Mater. Eng., Univ. of Alabama, Tuscaloosa, AL
fYear :
2008
fDate :
13-16 July 2008
Firstpage :
35
Lastpage :
40
Abstract :
Over the past two years, a Class 100/1000 microfabrication facility set up at the University of Alabama for development of a meso-scale gyroscope has been turned into a central user facility for materials and device research. We will describe a wide range of processes and devices that are being researched, fabricated and optimized in this facility. These include a) a current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor, b) precisely shaped silicon tips for atom probe specimens, c) nanosphere lithography for bit-patterned graded media, d) through silicon vias (TSVs) for integration of Si and GaAs-based circuitry, and the original focus of the facility, e) a meso-scale gyroscope for general aviation. These diversely funded efforts represent research programs from the materials and electrical engineering departments, all led by female faculty members and involving several graduate and undergraduate students from under-represented groups. The UA Microfabrication Facility, is successfully incubating and supporting several different areas of funded as well as unfunded research that could lead to significant increases in research expenditures.
Keywords :
III-V semiconductors; elemental semiconductors; etching; gallium arsenide; giant magnetoresistance; gyroscopes; integrated circuits; magnetic sensors; micromachining; micromechanical devices; nanolithography; semiconductor devices; silicon; storage media; GaAs; MEMS applications; Si; University of Alabama micro fabrication facility; atom probe specimens; bit-patterned graded media; current-perpendicular-to-the-plane giant magnetoresistive sensor; data storage; device fabrication; general aviation; meso-scale gyroscope development; nanosphere lithography; semiconductor applications; silicon tips; through silicon vias; Fabrication; Giant magnetoresistance; Gyroscopes; Magnetic materials; Magnetic sensors; Memory; Micromechanical devices; Probes; Semiconductor materials; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
University/Government/Industry Micro/Nano Symposium, 2008. UGIM 2008. 17th Biennial
Conference_Location :
Louisville, KY
Print_ISBN :
978-1-4244-2484-9
Electronic_ISBN :
978-1-4244-2485-6
Type :
conf
DOI :
10.1109/UGIM.2008.17
Filename :
4573195
Link To Document :
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