Inversion-Type Enhancement-Mode InP Mosfets with ALD High-K Al2O3 and HFO2 as Gate Dielectrics

Author

Wu, Y.Q. ; Xu, M. ; Xuan, Y. ; Ye, P.D. ; Li, J. ; Cheng, Z. ; Lochtefeld, A.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN

fYear

2008

fDate

13-16 July 2008

Firstpage

49

Lastpage

52

Abstract

Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect-transistors (MOSFETs) with 0.75 to 40 mum gate length fabricated on semi-insulating substrates and p-type doped InP epi-layers with atomic-layer-deposited (ALD) Al₂O₃ and HfO₂ as gate dielectrics are demonstrated. The ALD process on III-V compound semiconductors enables the formation of high- quality gate oxides and unpinning of Fermi-level on compound semiconductors. A 1-mum gate-length E-mode n- channel MOSFET with a HfO₂ gate oxide thickness of 10 nm shows a maximum drain current of 130 mA/mm and a trans- conductance of 40 mS/mm at the highest gate bias of 6 V.

Keywords

Fermi level; III-V semiconductors; MOSFET; aluminium compounds; atomic layer deposition; dielectric materials; hafnium compounds; indium compounds; Al₂O₃; Fermi-level; HfO₂; III-V compound semiconductors; InP; atomic-layer-deposited; gate dielectrics; high- quality gate oxides; inversion-type enhancement-mode MOSFET; n-channel metal-oxide-semiconductor field-effect-transistors; semi-insulating substrates; Aluminum oxide; Dielectric substrates; Fabrication; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; III-V semiconductor materials; Indium phosphide; MOSFETs; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

University/Government/Industry Micro/Nano Symposium, 2008. UGIM 2008. 17th Biennial

Conference_Location

Louisville, KY

Print_ISBN

978-1-4244-2484-9

Electronic_ISBN

978-1-4244-2485-6

Type

conf

DOI

10.1109/UGIM.2008.20

Filename

4573198