DocumentCode
2273870
Title
Electrical and optical analysis of low fluence fast neutron damage to JFETs
Author
Forster, S. ; Hoffmann, A. ; Charles, J.-P. ; Kerns, S.E. ; Kerns, D.V. ; de la Bardonnie, M. ; Mialhe, P.
Author_Institution
Centre Lorrain d´´Opt. et d´´Electron. des Solides, Metz, France
fYear
1999
fDate
1999
Firstpage
508
Lastpage
511
Abstract
The effects of fast neutron irradiation (30 MeV) on silicon n-channel JFETs are studied. Electrical parameters of the gate-channel junction are analyzed at several fluences using a custom software. Electrical parameter changes are attributed to bulk semiconductor defects. Irradiation effects on passivation overlayers are evaluated using analysis of gate-channel junction electroluminescence
Keywords
electroluminescence; junction gate field effect transistors; neutron effects; passivation; 30 MeV; Si; bulk semiconductor defect; electrical parameters; electroluminescence; gate-channel junction; neutron irradiation; passivation; silicon n-channel JFET; Avalanche breakdown; Electric resistance; Electric variables; Electroluminescence; Ionizing radiation; JFETs; Microelectronics; Neutrons; Passivation; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858633
Filename
858633
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