Electron sources for MAPPER maskless lithography

Author

Meijer, J.R. ; Gurtler, L. Dinu ; Steenbrink, S.W.H.K. ; van Veen, A.H.V. ; Wieland, M.J.

Author_Institution

MAPPER Lithography B.V., Delft, Netherlands

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

1

Lastpage

2

Abstract

MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing in combination with high speed optical data transport for switching the electron beams. With 13,260 electron beams further on split in 49 sub beams, each sub beam delivering a current of 0.3nA on the wafer, a throughput of 10 wafers per hour (wph) is realized for 22nm node lithography. In total a current of 175μA on the wafer is required. By clustering several of these systems together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV.

Keywords

electron beams; electron sources; lithography; MAPPER maskless lithography; current 0.3 nA; current 175 muA; electron sources; high speed optical data transport; massively parallel electron beam writing; size 22 nm; Brightness; Cathodes; Current measurement; Electron beams; Electron sources; Lithography; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference (IVESC), 2014 Tenth International

Conference_Location

St. Petersburg

Print_ISBN

978-1-4799-5770-5

Type

conf

DOI

10.1109/IVESC.2014.6892033

Filename

6892033