DocumentCode
2273896
Title
Experimental analysis of recombination and neutralization of radiation-induced charges, using isochronal annealing
Author
Quittard, O. ; Brisset, C. ; Joffre, F. ; Oudéa, C. ; Saigne, F. ; Dusseau, L. ; Fesquet, J. ; Gasiot, J.
Author_Institution
CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
fYear
1999
fDate
1999
Firstpage
512
Lastpage
518
Abstract
Use of isochronal annealing enabled us to elucidate the recombination and compensation processes that contribute to the radiation-induced charge neutralization (RICN) mechanism
Keywords
CMOS integrated circuits; annealing; compensation; electron-hole recombination; integrated circuit testing; radiation effects; CMOS; RICN mechanism; compensation processes; isochronal annealing; radiation-induced charges; recombination processes; Aerospace industry; Annealing; Circuit testing; Electron traps; Instruments; Inverters; Production; Spontaneous emission; Temperature measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location
Fontevraud
Print_ISBN
0-7803-5726-4
Type
conf
DOI
10.1109/RADECS.1999.858634
Filename
858634
Link To Document