Title :
Experimental analysis of recombination and neutralization of radiation-induced charges, using isochronal annealing
Author :
Quittard, O. ; Brisset, C. ; Joffre, F. ; Oudéa, C. ; Saigne, F. ; Dusseau, L. ; Fesquet, J. ; Gasiot, J.
Author_Institution :
CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
Abstract :
Use of isochronal annealing enabled us to elucidate the recombination and compensation processes that contribute to the radiation-induced charge neutralization (RICN) mechanism
Keywords :
CMOS integrated circuits; annealing; compensation; electron-hole recombination; integrated circuit testing; radiation effects; CMOS; RICN mechanism; compensation processes; isochronal annealing; radiation-induced charges; recombination processes; Aerospace industry; Annealing; Circuit testing; Electron traps; Instruments; Inverters; Production; Spontaneous emission; Temperature measurement; Voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858634
