Title :
Characterizing effects of radiation on forward and reverse saturation characteristics of n-channel devices [SRAMs]
Author :
Ali, M. N Jaafar ; Bhuva, B. ; Kerns, S. ; Mahe, M. ; Lawrence, R. ; Hoffmann, Axel
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN, USA
Abstract :
The forward and reverse characteristics of an n-channel device during the saturation mode of operation are used to determine the extent of damage non-uniformity along the channel. The non-uniformity increases with the total dose. The unmatched forward and reverse characteristics will be a major problem for memory circuits for advanced technologies
Keywords :
CMOS memory circuits; SRAM chips; electron traps; radiation effects; CMOS; SRAMs; damage nonuniformity; forward characteristics; forward saturation characteristics; memory circuits; n-channel devices; reverse characteristics; reverse saturation characteristics; saturation mode; total dose; CMOS process; Circuit optimization; Dielectrics and electrical insulation; Electric resistance; Fabrication; Logic circuits; MOS devices; Thickness measurement; Transconductance; Voltage;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on
Conference_Location :
Fontevraud
Print_ISBN :
0-7803-5726-4
DOI :
10.1109/RADECS.1999.858635
