DLTS and capacitance transients study of defects induced by neutron irradiation in MOS structures CCD process

Author

Ahaitouf, Az ; Losson, E. ; Charles, J.-P.

Author_Institution

Centre Lorrain d´´Opt. et Electron. des Solides, Metz Univ., France

fYear

1999

fDate

1999

Firstpage

524

Lastpage

527

Abstract

The aim of this paper is to study neutron irradiation effects on PMOS capacitors and NMOSFETs. The characterization of induced defects was made by capacitance transients C(t) measurements, DLTS spectroscopy, and optical DLTS (ODLTS). DLTS spectra present three peaks (1, 2, and 3) due to deep levels created in the semiconductor and two peaks (4 and 5) due to minority carrier generation. Levels 1 and 2 are reported in the literature and it was suggested that the level 2 may be due to the divacancy. Two other minority carrier traps have been observed on ODLTS spectra after irradiation. This can explain the decrease of the minority carrier generation lifetime observed by capacitance transients measurements

Keywords

MOS capacitors; MOSFET; carrier lifetime; deep level transient spectroscopy; minority carriers; neutron effects; vacancies (crystal); CCD process; DLTS spectroscopy; NMOSFETs; PMOS capacitors; capacitance transients; carrier generation lifetime; divacancy; minority carrier generation; neutron irradiation effects; optical DLTS; Capacitance measurement; Charge coupled devices; Electrical capacitance tomography; MOS capacitors; MOSFETs; Neutrons; Radiative recombination; Silicon; Spectroscopy; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on

Conference_Location

Fontevraud

Print_ISBN

0-7803-5726-4

Type

conf

DOI

10.1109/RADECS.1999.858636

Filename

858636