Symmetrical erosion patterns on single-crystal silicon cathodes after high-voltage vacuum breakdowns

Author

Onischenko, S.A. ; Nefyodtsev, E.V. ; Batrakov, A.V. ; Proskurovsky, D.I.

Author_Institution

Inst. of High Current Electron., Tomsk, Russia

fYear

2014

fDate

June 30 2014-July 4 2014

Firstpage

1

Lastpage

2

Abstract

We investigated the erosion traces which were forming on a surface of mono-crystalline silicon plates, which were used as cathodes of vacuum gaps. The plates had two surface orientations: 100 and 111. Single vacuum discharges were generated by short voltage pulses (10-80 ns, 200 kV) in gaps of 1-2 mm long. Each discharge leads to appearance a few symmetrical erosion patterns oriented along crystallographic directions. It is supposed that acoustoelectric and micro-plastic phenomena play an important role in figures formation.

Keywords

acoustoelectric effects; cathodes; elemental semiconductors; silicon; vacuum breakdown; wear; Si; acoustoelectric phenomena; crystallographic directions; erosion traces; few symmetrical erosion patterns; figure formation; high-voltage vacuum breakdowns; microplastic phenomena; monocrystalline silicon plate surface; short voltage pulses; single vacuum discharges; single-crystal silicon cathodes; surface orientations; time 10 ns to 80 ns; vacuum gaps; voltage 200 kV; Anodes; Cathodes; Discharges (electric); Etching; Silicon; Surface discharges; Vacuum breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electron Sources Conference (IVESC), 2014 Tenth International

Conference_Location

St. Petersburg

Print_ISBN

978-1-4799-5770-5

Type

conf

DOI

10.1109/IVESC.2014.6892047

Filename

6892047