Effects of impurity-free intermixing on InGaAs/GaAs/AlGaAs broad-area diode laser performance

Author

Yellowhair, J. ; Yan-Rui Zhao ; Hongjun Cao ; Hai Ling ; Chiyu Liu ; Jinhyun Lee ; Smolyakov, G.A. ; Osinski, M.

Author_Institution

Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA

fYear

2002

fDate

24-24 May 2002

Firstpage

548

Abstract

Summary form only given. In this paper, we report the fabrication and characterization of otherwise identical diode lasers with non-intermixed and intermixed active regions. Measured characteristics of these lasers are used to extract information about changes in threshold current density, internal optical loss, internal quantum efficiency, material gain, etc., introduced by the impurity-free vacancy diffusion process.

Keywords

III-V semiconductors; aluminium compounds; chemical interdiffusion; current density; gallium arsenide; indium compounds; optical losses; quantum well lasers; semiconductor quantum wells; InGaAs-GaAs-AlGaAs; InGaAs/GaAs/AlGaAs broad-area diode laser performance; double-quantum-well GRINSCH wafer; impurity-free intermixing; impurity-free vacancy diffusion; internal optical loss; internal quantum efficiency; material gain; quantum well intermixing; quantum-well shape; threshold current density; Current measurement; Data mining; Density measurement; Diode lasers; Gain measurement; Gallium arsenide; Indium gallium arsenide; Laser transitions; Loss measurement; Optical device fabrication;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-706-7

Type

conf

DOI

10.1109/CLEO.2002.1034308

Filename

1034308