PLAD (Plasma Doping) on 22nm Technology Node and Beyond - Evolutionary and/or Revolutionary

PLAD (plasma doping) is promising for both evolutionary and revolutionary doping options because of its unique advantages which can overcome or minimize many of the issues of the beam-line (BL) based implants. In this talk, we present developments of PLAD on both planar and 3D device structures. Comparing with the conventional BL implants, PLAD shows not only a significant production enhancement, but also a significant device performance improvement and 3D structure doping capability, including an 80% contact resistance reduction, more than 25% drive current increase, and conformal doping on non-planar device structures. In PLAD developments and applications, the conventional metrologies are not suitable for PLAD process because of their limits and PLAD´s unique properties. Novel diagnostic metrologies for PLAD process have been developed and are also presented in this talk.