Title :
Two-terminal diode steering element for 3D X-bar memory
Author :
Ping, Er-Xuan ; Erokhin, Yuri ; Gossmann, Hans-Joachim ; Khaja, Fareen Adeni
Author_Institution :
Appl. Mater., Inc., Santa Clara, CA, USA
Abstract :
We review recent progress in the application of the two-terminal diode steering element for 3D crossbar (X-bar) memory. Such architecture is emerging as one of the strong candidates for non-volatile memory to enable mobile computing with high speed, low power, and low cost. We address process, integration, and device scaling requirements of the steering element for fabricating PCRAM and metal oxide ReRAM cells. We also discuss in detail integration of ion implantation and activation to achieve the 50nm tall diode pillar needed for sub-2xnm 3D X-Bar memory.
Keywords :
diodes; mobile computing; random-access storage; 3D X-bar memory; 3D crossbar memory; PCRAM fabrication; diode pillar; ion implantation integration; metal oxide ReRAM cells; mobile computing; nonvolatile memory; size 50 nm; two-terminal diode steering element; Abstracts; CMOS integrated circuits; Hafnium oxide; Junctions; Lasers; Phase change random access memory; Three dimensional displays;
Conference_Titel :
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1258-5
Electronic_ISBN :
978-1-4673-1256-1
DOI :
10.1109/IWJT.2012.6212803
