Two-terminal diode steering element for 3D X-bar memory

Author

Ping, Er-Xuan ; Erokhin, Yuri ; Gossmann, Hans-Joachim ; Khaja, Fareen Adeni

Author_Institution

Appl. Mater., Inc., Santa Clara, CA, USA

fYear

2012

fDate

14-15 May 2012

Firstpage

24

Lastpage

28

Abstract

We review recent progress in the application of the two-terminal diode steering element for 3D crossbar (X-bar) memory. Such architecture is emerging as one of the strong candidates for non-volatile memory to enable mobile computing with high speed, low power, and low cost. We address process, integration, and device scaling requirements of the steering element for fabricating PCRAM and metal oxide ReRAM cells. We also discuss in detail integration of ion implantation and activation to achieve the 50nm tall diode pillar needed for sub-2xnm 3D X-Bar memory.

Keywords

diodes; mobile computing; random-access storage; 3D X-bar memory; 3D crossbar memory; PCRAM fabrication; diode pillar; ion implantation integration; metal oxide ReRAM cells; mobile computing; nonvolatile memory; size 50 nm; two-terminal diode steering element; Abstracts; CMOS integrated circuits; Hafnium oxide; Junctions; Lasers; Phase change random access memory; Three dimensional displays;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2012 12th International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4673-1258-5

Electronic_ISBN

978-1-4673-1256-1

Type

conf

DOI

10.1109/IWJT.2012.6212803

Filename

6212803