• DocumentCode
    2274407
  • Title

    Silicon vertical-nano-wire based photovaltaic device

  • Author

    Wang, J. ; Li, Z.H. ; Singh, N. ; Lo, G.Q. ; Lee, S.J.

  • Author_Institution
    Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
  • fYear
    2010
  • fDate
    27-29 Oct. 2010
  • Firstpage
    247
  • Lastpage
    249
  • Abstract
    High efficiency nanowire based solar cell is realized on single-crystalline Si substrate using standard CMOS processes. High short-circuit current of 22.5mA/cm2 and power conversion efficiency of ~7.5% is demonstrated with reflectivity of the nanowire surface as low as ~8%.
  • Keywords
    nanowires; photovoltaic cells; short-circuit currents; silicon; solar cells; CMOS processes; photovoltaic device; power conversion efficiency; short-circuit current; silicon vertical nanowire; solar cell; Arrays; Junctions; Optical surface waves; Photovoltaic cells; Reflectivity; Silicon; Substrates; Silicon vertical nanowire; solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    IPEC, 2010 Conference Proceedings
  • Conference_Location
    Singapore
  • ISSN
    1947-1262
  • Print_ISBN
    978-1-4244-7399-1
  • Type

    conf

  • DOI
    10.1109/IPECON.2010.5697114
  • Filename
    5697114
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2274407