Title :
Modeling of long wavelength quantum-dot lasers with dots-in-a-well structure
Author :
Xiaodong Huang ; Stintz, A. ; Hua Li ; Cheng, J. ; Malloy, K.J.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
Summary form only given. The zero-dimensional nature and three-dimensional confinement of QDs give rise to widely-spaced discrete states, resulting in carrier dynamics and lasing characteristics that differ significantly from double heterostructure or quantum well lasers. In this paper, we propose a rate equation model for the dots-in-a-well (DWELL) structure, and analyze the steady-state and transient behavior of the DWELL lasers in detail using the model.
Keywords :
III-V semiconductors; indium compounds; laser theory; quantum dot lasers; semiconductor quantum dots; InAs; InAs DWELL structure quantum-dot lasers; carrier dynamics; dots-in-a-well structure; dynamic properties; lasing characteristics; long wavelength quantum-dot lasers; rate equation model; steady state behavior; three-dimensional confinement; transient behavior; widely-spaced discrete states; zero-dimensional nature; Absorption; Charge carrier processes; Equations; Laser modes; Laser theory; Quantum dot lasers; Quantum well lasers; Radiative recombination; Spontaneous emission; Steady-state;
Conference_Titel :
Lasers and Electro-Optics, 2002. CLEO '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-706-7
DOI :
10.1109/CLEO.2002.1034318
