• DocumentCode
    2274592
  • Title

    Ultra-low standby-currents for deep sub-micron VLSI CMOS circuits: smart series switch

  • Author

    van der Meer, P.R. ; van Staveren, A. ; van Roermund, A.H.M.

  • Author_Institution
    Electron. Res. Lab., Delft Univ. of Technol., Netherlands
  • Volume
    4
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    1
  • Abstract
    The Smart Series Switch (“Triple-S”) technique provides, for present and future deep-sub-micron technologies, in standby mode for 5 decades leakage-current reduction while retaining circuit states by using a two-transistor series switch with a smart combination of state and mode dependency and high and low thresholds
  • Keywords
    CMOS digital integrated circuits; VLSI; field effect transistor switches; flip-flops; leakage currents; low-power electronics; VLSI CMOS circuits; deep submicron CMOS circuits; high thresholds; leakage-current reduction; low thresholds; mode dependency; power reduction technique; smart series switch; standby mode; state dependency; two-transistor series switch; ultra-low standby-currents; CMOS technology; Equations; Information technology; Laboratories; Leakage current; Switches; Switching circuits; Threshold voltage; Time factors; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on
  • Conference_Location
    Geneva
  • Print_ISBN
    0-7803-5482-6
  • Type

    conf

  • DOI
    10.1109/ISCAS.2000.858673
  • Filename
    858673
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2274592