DocumentCode
2274618
Title
A 2 V 2.4 GHz fully integrated CMOS LNA with Q-enhancement circuit
Author
Huang, J.C. ; Weng, Ro-Min ; Hsiao, Chih-Lung ; Lin, Kun-Yi
Author_Institution
Dept. of Electr. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan
Volume
3
fYear
2001
fDate
2001
Firstpage
1028
Abstract
A 2 V 2.4 GHz ISM (Industrial Scientific and Medical) frequency band LNA (Low Noise Amplifier) with negative resistance is proposed. The LNA is designed with 0.35 μm process. The noise figure including the resistance of inductors has been considered. An inductor is added between the MOS of cascode circuits to improve the matching and increase power gain. Using negative resistance reduces output parasitic resistance of spiral inductor
Keywords
CMOS analogue integrated circuits; Q-factor; UHF amplifiers; UHF integrated circuits; impedance matching; inductors; integrated circuit noise; negative resistance circuits; 0.35 micron; 2 V; 2.4 GHz; CMOS LNA; ISM; Q-enhancement circuit; cascode circuits; matching; negative resistance; noise figure; output parasitic resistance; power gain; spiral inductor; Electric resistance; Gallium arsenide; Immune system; Inductors; MOSFET circuits; Noise generators; Q factor; Radio frequency; Radiofrequency integrated circuits; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2001. APMC 2001. 2001 Asia-Pacific
Conference_Location
Taipei
Print_ISBN
0-7803-7138-0
Type
conf
DOI
10.1109/APMC.2001.985293
Filename
985293
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