A new cad-model of a gate turn-off thyristor

A new CAD-model of a GTO-thyristor has been developed, including non-linear junction recovery, lateral currents through the conductivity-modulated base layers and external circuit conditions. Computed results give a real time transient response of charges, currents and voltages. A comparison will be made between theoretical and experimental results of a test sample. Agreement is shown to be satisfactory for a quantitative estimation of the actual device characteristics. Further, turn-off time variation due to device parameter fluctuations will be predicted for wide p-base samples.