Title :
BF2+ ion implantation and dopant activation in strained Germanium-tin (Ge1−xSnx) epitaxial layer
Author :
Han, Genquan ; Su, Shaojian ; Zhou, Qian ; Wang, Lanxiang ; Wang, Wei ; Zhang, Guangze ; Xue, Chunlai ; Cheng, Buwen ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
Abstract :
BF2+ implant was performed on Ge1-xSnx epitaxial layers where x is 0.03 or 0.053. The implant depth for BF2+ implant into Ge1-xSnx alloys is larger as compared to the same implant into Ge. It is observed that the diffusion of B during a rapid thermal annealing (RTA) is substantially suppressed by the presence of Sn. Sheet resistance measurements show that the B atoms can be activated at 400 °C in Ge1-xSnx alloys.
Keywords :
boron compounds; epitaxial layers; germanium alloys; ion implantation; rapid thermal annealing; semiconductor doping; tin; BF2+; BF2+ ion implantation; Ge1-xSnx; RTA; dopant activation; germanium-tin epitaxial layer; implant depth; rapid thermal annealing; sheet resistance measurement; temperature 400 C; Annealing; Atomic layer deposition; Epitaxial growth; MOSFET circuits; Metals; X-ray scattering;
Conference_Titel :
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1258-5
Electronic_ISBN :
978-1-4673-1256-1
DOI :
10.1109/IWJT.2012.6212820
