Title :
Analysis of a power semiconductor near its threshold of destruction
Author :
Jaecklin, A.A. ; Lietz, M.
Author_Institution :
Boveri Ltd., Baden, Switzerland
Abstract :
The limits of stable operation are investigated for various current densities. A model of the destruction mechanism for high current densities is proposed considering heat flow and the appearance of an axially localized temperature peak.
Keywords :
current density; power semiconductor devices; semiconductor device models; axially localized temperature peak; current densities; destruction mechanism; destruction threshold; power semiconductor; Current density; Heating; Nonhomogeneous media; Plasma temperature; Temperature; Temperature measurement; Thyristors;
Conference_Titel :
Power Electronics Specialists Conference, 1974 IEEE
Conference_Location :
Murray Hill, NJ
DOI :
10.1109/PESC.1974.7074339
