Simulations of the terahertz AlGaN/GaN resonant tunneling diode

A simulation for terahertz aluminum gallium nitride (AlGaN)/gallium nitride (GaN) resonant tunneling diode (RTD) at room temperature is reported, by introducing deep-level defects into the polarized AlGaN/GaN/AlGaN quantum well. Results show that an obvious degradation in negative differential resistance(NDR) characteristic of RTD occurs when the defect density is above 10⁶ cm^-2. Finally, a RTD oscillator is simulated, which output power of 22.59 mW at 500GHz with the DC-to-RF conversion of 8.37%.