• DocumentCode
    2274891
  • Title

    Multi-dimensional current flow in silicon power transistors operating in the saturation mode

  • Author

    Sunshine, R.A.

  • Author_Institution
    RCA Labs., Princeton, NJ, USA
  • fYear
    1974
  • fDate
    10-12 June 1974
  • Firstpage
    154
  • Lastpage
    161
  • Abstract
    The current distribution in silicon power transistors operating in the saturation region has been determined by imaging the near-infrared recombination emitted by the transistor. It was found that the overlap diode model for the transistor provides a far better description of the current distribution than the more commonly-used one-dimensional Ebers-Moll model.
  • Keywords
    current distribution; power transistors; semiconductor device models; current distribution; multidimensional current flow; near-infrared recombination; one-dimensional Ebers-Moll model; overlap diode model; saturation region; silicon power transistors; Abstracts; Integrated circuits; Integrated optics; Optical saturation; Probes; Stimulated emission; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics Specialists Conference, 1974 IEEE
  • Conference_Location
    Murray Hill, NJ
  • ISSN
    0275-9306
  • Type

    conf

  • DOI
    10.1109/PESC.1974.7074342
  • Filename
    7074342
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2274891