The influence of non-ferroelectric interface layers and inclusions on the imprint behavior of ferroelectric thin film capacitors

Author

Boettger, Ulrich ; Braeuhaus, Dennis ; Waser, Rainer

Author_Institution

RWTH Aachen Univ., Aachen

fYear

2007

fDate

27-31 May 2007

Firstpage

32

Lastpage

34

Abstract

Based on the Arlt model of the aging mechanism in ferroelectric bulk ceramics it will be shown that in thin films the alignment of defect dipoles with the orientation of the surrounding ferroelectric dipoles could be responsible for the imprint. The driving force of the alignment is related to the spontaneous polarization of the ferroelectric. Due to the existence of non-ferroelectric interface layers or inclusions, depolarization occurs which could be observed by a deformation of the hysteresis loop ("shearing"). The proposed mechanism predicts that the imprint is reduced with higher depolarization effects. The suggestion is verified by imprint measurements of a thickness series of PZT thin film capacitors.

Keywords

dielectric depolarisation; dielectric hysteresis; ferroelectric capacitors; ferroelectric ceramics; ferroelectric thin films; thin film capacitors; PZT; defect dipole alignment; deformation; depolarization; ferroelectric bulk ceramics; ferroelectric thin film capacitors; hysteresis loop; imprint; nonferroelectric interface layers; Aging; Capacitors; Ceramics; Electrodes; Ferroelectric materials; Magnetic hysteresis; Nonvolatile memory; Polarization; Shearing; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393158

Filename

4393158