The effects of block oxide length (Lbo) and height (Hbo) in a bMOS

In this paper, we investigate the important device characteristics of block oxide (BO) MOSFETs (bMOS), which are the BO length (L_bo) and the height (H_bo). According to the simulation results, the variation of L_bo and H_bo strongly affects the device characteristics, such as the sub-threshold swing, threshold voltage, on-state drain current (I_on), and the off-state drain current (I_off). This is because the variation of L_bo and H_bo changes both the areas of BO and source/drain (S/D) regions, resulting in a variation of increase or decrease in the p-n junction area between the S/D regions and silicon substrate.