Misted Deposition of [3D] Trenches for Drams and Frams III. PZT Thin Films and PZT Nanotubes

Author

Miyake, M. ; Scott, J.F. ; Lou, D.J. ; Morrison, F.D. ; Motoyama, S. ; Tatsuta, T. ; Tsuji, O.

Author_Institution

Univ. of Cambridge Cambridge CB2 3EQ, Cambridge

fYear

2007

fDate

27-31 May 2007

Firstpage

38

Lastpage

40

Abstract

Pb(Zr,Ti)O₃ (PZT) thin films and nanotube were prepared on SiO₂/Si substrates by liquid source misted chemical deposition (LSMCD) using Samco MD-6060 apparatus. We report the deposition and characterization of transparent ferroelectric thin films and nanotubes. PZT thin films deposited at ambient conditions and annealing at 700degC exhibit good ferroelectric properties with remanent polarisation of ca. 15 muC/cm². The step coverage was 59% on the side wall and 79% on the bottom wall.

Keywords

DRAM chips; annealing; dielectric polarisation; ferroelectric storage; ferroelectric thin films; lead compounds; liquid phase deposition; nanotubes; transparency; 3D trenches; DRAM; FRAM; PZT; PZT thin films; SiO₂-Si; SiO₂-Si substrates; annealing; liquid source misted chemical deposition; nanotubes; remanent polarisation; temperature 700 degC; transparent ferroelectric thin films; Annealing; Chemicals; Ferroelectric films; Ferroelectric materials; Nanotubes; Nonvolatile memory; Random access memory; Semiconductor thin films; Sputtering; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393160

Filename

4393160