Soft X-ray photoelectron spectroscopy study of Boron doped on top surfaces and sidewalls of Si Fin structures

Author

Miyata, Youhei ; Kanehara, Jun ; Nohira, Hiroshi ; Izumi, Yudai ; Muro, Takayuki ; Kinoshita, Toyohiko ; Ahmet, Parhat ; Kakushima, Kuniyuki ; Tsutsui, Kazuo ; Hattori, Takeo ; Iwai, Hiroshi

Author_Institution

Tokyo Inst. of Technol., Yokohama, Japan

fYear

2012

fDate

14-15 May 2012

Firstpage

142

Lastpage

145

Abstract

2D distribution of depth profiling of impurities and their activity/non-activity are very important for development of process technology for nano-scale 3D devices. Si Fin structures doped with Boron (B) were evaluated by soft X-ray photoelectron spectroscopy (SXPES) and a feasibility of detecting the difference were demonstrated between the chemical bonding states as well as concentrations of B on top of Fins and those on sidewall of Fins.

Keywords

X-ray photoelectron spectra; bonds (chemical); boron; elemental semiconductors; impurities; nanoelectronics; semiconductor doping; silicon; 2D distribution; SXPES; Si fin structure; Si:B; chemical bonding state; depth profiling; impurities; nano-scale 3D device; process technology; soft X-ray photoelectron spectroscopy; Abstracts; Annealing; Bit error rate; Performance evaluation; Silicon; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology (IWJT), 2012 12th International Workshop on

Conference_Location

Shanghai

Print_ISBN

978-1-4673-1258-5

Electronic_ISBN

978-1-4673-1256-1

Type

conf

DOI

10.1109/IWJT.2012.6212829

Filename

6212829