Title :
Soft X-ray photoelectron spectroscopy study of Boron doped on top surfaces and sidewalls of Si Fin structures
Author :
Miyata, Youhei ; Kanehara, Jun ; Nohira, Hiroshi ; Izumi, Yudai ; Muro, Takayuki ; Kinoshita, Toyohiko ; Ahmet, Parhat ; Kakushima, Kuniyuki ; Tsutsui, Kazuo ; Hattori, Takeo ; Iwai, Hiroshi
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
2D distribution of depth profiling of impurities and their activity/non-activity are very important for development of process technology for nano-scale 3D devices. Si Fin structures doped with Boron (B) were evaluated by soft X-ray photoelectron spectroscopy (SXPES) and a feasibility of detecting the difference were demonstrated between the chemical bonding states as well as concentrations of B on top of Fins and those on sidewall of Fins.
Keywords :
X-ray photoelectron spectra; bonds (chemical); boron; elemental semiconductors; impurities; nanoelectronics; semiconductor doping; silicon; 2D distribution; SXPES; Si fin structure; Si:B; chemical bonding state; depth profiling; impurities; nano-scale 3D device; process technology; soft X-ray photoelectron spectroscopy; Abstracts; Annealing; Bit error rate; Performance evaluation; Silicon; Surface treatment;
Conference_Titel :
Junction Technology (IWJT), 2012 12th International Workshop on
Conference_Location :
Shanghai
Print_ISBN :
978-1-4673-1258-5
Electronic_ISBN :
978-1-4673-1256-1
DOI :
10.1109/IWJT.2012.6212829
