DocumentCode
2275023
Title
Non-Volatile Memory Concepts Based on Resistive Switching
Author
Waser, Rainer
Author_Institution
RWTH Aachen Univ., Aachen
fYear
2007
fDate
27-31 May 2007
Firstpage
43
Lastpage
45
Abstract
A wide spectrum of resistively switching metal-insulator-metal systems has been proposed for future non-volatile memory applications. This paper attempts a classification of the phenomena and the conceivable microscopic mechanism.
Keywords
MIM devices; random-access storage; switching; metal-insulator-metal systems; microscopic mechanism; nonvolatile memory; resistive switching; Conducting materials; Electric resistance; Electrodes; Electrons; Metal-insulator structures; Nonvolatile memory; Phase change materials; Random access memory; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on
Conference_Location
Nara
ISSN
1099-4734
Print_ISBN
978-1-4244-1334-8
Electronic_ISBN
1099-4734
Type
conf
DOI
10.1109/ISAF.2007.4393162
Filename
4393162
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