Set Power Dependency on the Resistive Switching in Cr-doped SrZrO3 Thin Films for Nonvolatile Memory Devices

Author

Park, Jae-Wan ; Jung, Kyooho ; Yang, Min Kyu ; Park, Jong-Wan ; Lee, Jeon-Kook

Author_Institution

Korea Inst. of Sci. & Technol., Seoul

fYear

2007

fDate

27-31 May 2007

Firstpage

46

Lastpage

47

Abstract

Pt/Cr-doped SrZrO₃/SrRuO₃ metal-oxide-metal (MOM) structures were fabricated by off-axis rf sputtering for nonvolatile memory applications. The MOM structures showed reproducible and bistable resistive switching behaviors. From the low-temperature I-V measurements, it was found that the low-resistance state (LRS) was governed by ohmic conduction. In addition, the characteristics of LRS were influenced by switching parameters. With increasing set power and sweep delay time, the LRS current was decreased. These results suggested that the resistive switching mechanism is related to the formation of local conducting path in SrZrO₃ matrix.

Keywords

MIM structures; chromium; electrical resistivity; ferroelectric switching; ferroelectric thin films; platinum; strontium compounds; Pt-SrZrO₃:Cr-SrRuO₃; bistable resistive switching; local conducting path; low-resistance state; metal-oxide-metal structures; nonvolatile memory devices; off-axis rf sputtering; ohmic conduction; sweep delay time; thin films; Argon; Delay effects; Materials science and technology; Message-oriented middleware; Nonvolatile memory; Sputtering; Substrates; Temperature distribution; Thin film devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2007. ISAF 2007. Sixteenth IEEE International Symposium on

Conference_Location

Nara

ISSN

1099-4734

Print_ISBN

978-1-4244-1334-8

Electronic_ISBN

1099-4734

Type

conf

DOI

10.1109/ISAF.2007.4393163

Filename

4393163